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FZ600R17KE3HOSA1

FZ600R17KE3HOSA1

FZ600R17KE3HOSA1

Infineon Technologies

FZ600R17KE3HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FZ600R17KE3HOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-40°C~125°C TJ
Published 2002
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count5
JESD-30 Code R-XUFM-X3
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 3150W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 840A
Turn On Time400 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 600A
Turn Off Time-Nom (toff) 1200 ns
IGBT Type Trench Field Stop
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 54nF @ 25V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:74 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$168.88000$168.88

FZ600R17KE3HOSA1 Product Details

FZ600R17KE3HOSA1 Description

FZ600R17KE3HOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FZ600R17KE3HOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FZ600R17KE3HOSA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FZ600R17KE3HOSA1 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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