FZ1200R33KF2CB3S2NDSA1 Description
FZ1200R33KF2CB3S2NDSA1 is a 3300v IGBT-Modules. The FZ1200R33KF2CB3S2NDSA1 can be applied in Automotive, Infotainment & cluster, Communications equipment, Broadband fixed line access, Personal electronics, and Connected peripherals & printers applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FZ1200R33KF2CB3S2NDSA1 is in the tray package with 14kW Power dissipation.
FZ1200R33KF2CB3S2NDSA1 Features
Collector-emitter voltage Tvj = 25°C: 1600v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 45A
Repetitive peak collector current Tp = 1 ms: 50A
Total power dissipation Tc = 25°C, Tvj max = 150: 230W
Gate-emitter peak voltage: ±20V
FZ1200R33KF2CB3S2NDSA1 Applications
Automotive
Infotainment & cluster
Communications equipment
Broadband fixed line access
Personal electronics
Connected peripherals & printers
