FZ1200R17HE4HOSA2 Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.
FZ1200R17HE4HOSA2 Applications
·High power converters
·Motor drives
Electrical Features
·Extended operating temperature Tvjop
·Low switching losses
·Low VCEsat
·Tvjop=150℃
FZ1200R17HE4HOSA2 Features
·4kVAC 1min insulation
·Package with CTI>400
·High creepage and clearance distances
·High power density
·IHM B housing
·Copper base plate
