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FS75R17KE3BOSA1

FS75R17KE3BOSA1

FS75R17KE3BOSA1

Infineon Technologies

FS75R17KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS75R17KE3BOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~125°C
Published 2012
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 35
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count35
JESD-30 Code R-XUFM-X35
Qualification StatusNot Qualified
Number of Elements 6
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 465W
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 130A
Turn On Time450 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 75A
Turn Off Time-Nom (toff) 1100 ns
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 6.8nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:72 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$136.00300$1360.03

FS75R17KE3BOSA1 Product Details

FS75R17KE3BOSA1 Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

FS75R17KE3BOSA1 Applications

·Auxiliary inverters

·Motor drives

·Servo drives

FS75R17KE3BOSA1 Features

·Low VcEsat

·Tjop=150°℃

·Trench IGBT 4

·VCEsatwith positive temperature coefficient

Mechanical Features

·AlzO3 substrate with low thermal resistance

·High power and thermal cycling capability*Integrated NTC temperature sensor

·Copper base plate


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