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FS20R06XL4BOMA1

FS20R06XL4BOMA1

FS20R06XL4BOMA1

Infineon Technologies

FS20R06XL4BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS20R06XL4BOMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature-40°C~125°C
Part StatusObsolete
Moisture Sensitivity Level (MSL) Vendor Undefined
Configuration Three Phase Inverter
Power - Max 89W
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 26A
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 20A
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 900pF @ 25V
In-Stock:1805 items

FS20R06XL4BOMA1 Product Details

FS20R06XL4BOMA1 Description


An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.



FS20R06XL4BOMA1 Features

·Extended Operation Temperature Tyop

·High DC Stability

·High Short Circuit CapabilitySelf Limiting Short Circuit Current

·Unbeatable Robustness

·VcEsatwith positiveTemperature Coefficient

·Low VCEsat

Mechanical Features

·4kVAC 1min Insulation

·Package withCTI>400

·High Creepage and Clearance Distances

·High Power and Thermal Cycling Capability

·High Power Density

FS20R06XL4BOMA1 Applications

·Motor drives

·Servo drives

·UPS systems




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