FP10R12KE3BOMA1 Description
FP10R12KE3BOMA1 is a 1200v IGBT-Modules. The FP10R12KE3BOMA1 can be applied in Automotive, Advanced driver assistance systems (ADAS), Enterprise systems, Datacenter & enterprise computing, Personal electronics, Home theater & entertainment, applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP10R12KE3BOMA1 is in the tray package with 165W Power dissipation.
FP10R12KE3BOMA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 15A
Repetitive peak collector current Tp = 1 ms: 20A
Total power dissipation Tc = 25°C: 55W
Gate-emitter peak voltage: ±20V
FP10R12KE3BOMA1 Applications
Industrial
Factory automation & control
Enterprise systems
Enterprise machine
Personal electronics
Tablets
