FF900R12IP4VBOSA1 Description
The FF900R12IP4VBOSA1 is a 1200 V, 900 A dual IGBT module, PrimePACK?2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC. The abbreviated version of an insulated-gate bipolar transistor is IGBT, which is a power semiconductor die. A grouping of numerous IGBT power semiconductor dies in one physical package is known as an IGBT power module.
FF900R12IP4VBOSA1 Features
Electrical Features
Low VCEsat
Unbeatable Robustness
VCEsat with positive Temperature Coefficient
Extended Operation Temperature Tvjop
High DC Stability
High Short Circuit Capability, Self Limiting Short Circuit Current
Mechanical Features
High Creepage and Clearance Distances
High Power and Thermal Cycling Capability
High Power Density
Substrate for Low Thermal Resistance
4 kV AC 1min Insulation
Package with CTI>400
FF900R12IP4VBOSA1 Applications
