FF75R12RT4HOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.
FF75R12RT4HOSA1 Applications
·High Power Converters
·Motor Drives
·UPS Systems
FF75R12RT4HOSA1 Features
·Extended Operation Temperature Tyjop
·Low Switching Losses
·Low VCEsat
·Tvjop=150℃
·VCEsat with positiveTemperature Coefficient
Mechanical Features
·lsolated Base Plate
·Standard Housing
