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FF600R12ME4PBOSA1

FF600R12ME4PBOSA1

FF600R12ME4PBOSA1

Infineon Technologies

FF600R12ME4PBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF600R12ME4PBOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Surface MountNO
Transistor Element Material SILICON
Published 2006
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn On Time310 ns
Collector Current-Max (IC) 995A
Turn Off Time-Nom (toff) 770 ns
Collector-Emitter Voltage-Max 1200V
RoHS StatusNon-RoHS Compliant
In-Stock:51 items

Pricing & Ordering

QuantityUnit PriceExt. Price
6$242.54833$1455.28998

FF600R12ME4PBOSA1 Product Details

FF600R12ME4PBOSA1 Description

EconoDUAL? 3 1200 V, 600 A dual IGBT module with TRENCHSTOP? IGBT4, Emitter Controlled diode and NTC. Also available with Thermal Interface Material or as variation with PressFIT mounting technology: FF600R12ME4C_B11.

FF600R12ME4PBOSA1 Applications

Power converter and inverter for wind turbines

Solutions for photovoltaic energy systems

Uninterruptible Power Supplies (UPS)

FF600R12ME4PBOSA1 Features

·Low VCEsat

·Tvjop=150

·VcEsat with positive temperature coefficient High power density

.lsolated base plate

·Standard housing


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