FF225R17ME4B11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FF225R17ME4B11BOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
11
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X11
Number of Elements
2
Configuration
2 Independent
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
1500W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
340A
Turn On Time
350 ns
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 225A
Turn Off Time-Nom (toff)
1500 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
18.5nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
In-Stock:1527 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6
$147.47667
$884.86002
FF225R17ME4B11BOSA1 Product Details
FF225R17ME4B11BOSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
FF225R17ME4B11BOSA1 Applications
·Motor Drives
·Servo Drives
·UPS Systems
·Wind Turbines
FF225R17ME4B11BOSA1 Features
·Low VCEsat
·Tvjop=150℃
Mechanical Features
·Standard Housing
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