FF225R12ME4B11BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FF225R12ME4B11BPSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Packaging
Bulk
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
11
ECCN Code
EAR99
Additional Feature
UL APPROVED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X11
Number of Elements
2
Configuration
2 Independent
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
1050W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
320A
Turn On Time
220 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 225A
Turn Off Time-Nom (toff)
600 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
13nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
In-Stock:2600 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6
$115.10333
$690.61998
FF225R12ME4B11BPSA1 Product Details
FF225R12ME4B11BPSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.
FF225R12ME4B11BPSA1 Applications
·Motor Drives
·Servo Drives
·UPS Systems
·Wind Turbines
FF225R12ME4B11BPSA1 Features
·Low VCEsat
·Tvjop =150℃
Mechanical Features
·Standard Housing
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