FF150R12KE3GB2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FF150R12KE3GB2HOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
In-Stock:74 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$34.480000
$34.48
10
$32.528302
$325.28302
100
$30.687077
$3068.7077
500
$28.950073
$14475.0365
1000
$27.311390
$27311.39
FF150R12KE3GB2HOSA1 Product Details
FF150R12KE3GB2HOSA1 Description
FF150R12KE3GB2HOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FF150R12KE3GB2HOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 400A. The FF150R12KE3GB2HOSA1 has 3 pins and it is available in Tube packaging way. FF150R12KE3GB2HOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FF150R12KE3GB2HOSA1 Features
Input Capacitance (Cies) @ Vce: 14nF @ 25V
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
Current - Collector (Ic) (Max): 320A
Current - Collector Cutoff (Max): 5mA
Voltage - Collector Emitter Breakdown (Max): 1200V
FF150R12KE3GB2HOSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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