FF1200R12KE3NOSA1 Description
The FF1200R12KE3NOSA1 is an IGBT Module 2 Independent 1200 V 5000 W Chassis Mount Module. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor dies into a single package is known as an IGBT power module.
FF1200R12KE3NOSA1 Features
Electrical Features
Mechanical Features
Package with CTI > 400
Copper Base Plate
Standard Housing
FF1200R12KE3NOSA1 Applications
