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FD600R17KE3KB5NOSA1

FD600R17KE3KB5NOSA1

FD600R17KE3KB5NOSA1

Infineon Technologies

FD600R17KE3KB5NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FD600R17KE3KB5NOSA1 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 36 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature-40°C~125°C
Published 2002
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Configuration Single Chopper
Power - Max 4300W
Halogen Free Not Halogen Free
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Power Dissipation-Max (Abs) 4300W
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 600A
NTC ThermistorNo
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 54nF @ 25V
VCEsat-Max 2.45 V
RoHS StatusRoHS Compliant
Lead Free Contains Lead
In-Stock:3615 items

Pricing & Ordering

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FD600R17KE3KB5NOSA1 Product Details

FD600R17KE3KB5NOSA1 Description


FD600R17KE3KB5NOSA1 is a 1700v IGBT-Modules. The FD600R17KE3KB5NOSA1 can be applied in Communications equipment, Datacom modules, Industrial, Pro audio, video & signage, Enterprise systems, and Datacenter & enterprise computing applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FD600R17KE3KB5NOSA1 is in the tray package with 4kW Power dissipation.



FD600R17KE3KB5NOSA1 Features


Collector-emitter voltage Tvj = 25°C: 1700v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 950A

Repetitive peak collector current Tp = 1 ms: 1200A

Total power dissipation Tc = 25°C: 4kW

Gate-emitter peak voltage: ±20V



FD600R17KE3KB5NOSA1 Applications


Communications equipment

Datacom module

Industrial

Pro audio, video & signage

Enterprise systems

Datacenter & enterprise computing


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