DF400R12KE3HOSA1 Description
DF400R12KE3HOSA1 is a 1200v IGBT-Modules. The DF400R12KE3HOSA1 can be applied in Industrial, Grid infrastructure, Enterprise systems, Enterprise machines, Personal electronics, and Tablet applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor DF400R12KE3HOSA1 is in the tray package with 2000W Power dissipation.
DF400R12KE3HOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 580A
Repetitive peak collector current Tp = 1 ms: 800A
Total power dissipation Tc = 25°C: 2000W
Gate-emitter peak voltage: ±20V
DF400R12KE3HOSA1 Applications
Industrial
Grid infrastructure
Enterprise systems
Enterprise machine
Personal electronics
Tablets
