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DF150R12W1H3FB11BOMA1

DF150R12W1H3FB11BOMA1

DF150R12W1H3FB11BOMA1

Infineon Technologies

DF150R12W1H3FB11BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

DF150R12W1H3FB11BOMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS StatusROHS3 Compliant
In-Stock:189 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$58.140179$58.140179
10$54.849225$548.49225
100$51.744552$5174.4552
500$48.815615$24407.8075
1000$46.052467$46052.467

DF150R12W1H3FB11BOMA1 Product Details

DF150R12W1H3FB11BOMA1 Description


DF150R12W1H3FB11BOMA1 developed by Infineon Technologies is a type of IGBT module which is a modular semiconductor product which is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge; the packaged IGBT module is directly used in frequency converters, UPS uninterrupted power supply and other equipment. It is characterized by energy saving, convenient installation and maintenance, and stable heat dissipation.



DF150R12W1H3FB11BOMA1 Features


Energy saving

Convenient installation

Convenient maintenance

Stable heat dissipation



DF150R12W1H3FB11BOMA1 Applications


Rail transit

Smart grid

Aerospace

Electric vehicles

New energy equipment


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