DDB6U134N16RRBOSA1 Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.
DDB6U134N16RRBOSA1 Applications
· Industrial Motor Drive
· Uninterruptible Power Supply
· Welding and Cutting Machine
· Switched Mode Power Supply
· Induction Heating
DDB6U134N16RRBOSA1 Features
Available in 5-V, 4.85-V, and 3.3-V
Fixed-Output and Adjustable Versions
Very Low-Dropout Voltage ...Maximum of
32 mV at IO = 100 mA (TPS71H50)
Very Low Quiescent Current – Independent
of Load . . . 285 μA Typ
Extremely Low Sleep-State Current
0.5 μA Max
2% Tolerance Over Specified Conditions
For Fixed-Output Versions
