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D1721NH90TAOSA1

D1721NH90TAOSA1

D1721NH90TAOSA1

Infineon Technologies

DIODE GEN PURP D12026K-1

SOT-23

D1721NH90TAOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 32 Weeks
Mounting Type Chassis Mount
Package / Case DO-200AE
Surface MountYES
Diode Element Material SILICON
PackagingTray
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code8541.10.00.80
Terminal Position END
Terminal FormNO LEAD
JESD-30 Code O-CEDB-N2
Operating Temperature (Max) 140°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 150mA @ 9000V
Operating Temperature - Junction 0°C~140°C
Output Current-Max 2160A
Application GENERAL PURPOSE
Current - Average Rectified (Io) 2160A
Number of Phases 1
Rep Pk Reverse Voltage-Max 9000V
Non-rep Pk Forward Current-Max 34000A
Forward Voltage-Max 3.8V
Reverse Current-Max 150000μA
RoHS StatusROHS3 Compliant
In-Stock:52 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About D1721NH90TAOSA1

The D1721NH90TAOSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP D12026K-1.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the D1721NH90TAOSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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