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D1230N16TXPSA1

D1230N16TXPSA1

D1230N16TXPSA1

Infineon Technologies

DIODE GEN PURP 1.6KV 1230A

SOT-23

D1230N16TXPSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Chassis Mount
Package / Case DO-200AA, A-PUK
PackagingBulk
Published 2010
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 50mA @ 1600V
Voltage - Forward (Vf) (Max) @ If 1.063V @ 800A
Operating Temperature - Junction -40°C~180°C
Halogen Free Halogen Free
Voltage - DC Reverse (Vr) (Max) 1600V
Current - Average Rectified (Io) 1230A
Max Repetitive Reverse Voltage (Vrrm) 1.6kV
Max Forward Surge Current (Ifsm) 11.8kA
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:95 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$96.53000$96.53

About D1230N16TXPSA1

The D1230N16TXPSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 1.6KV 1230A.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the D1230N16TXPSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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