BUP213 Description
For a 600 V reverse voltage IGBT BUP213 , the wafer thickness required is about 100 microns, which is a huge technical challenge in manufacturing. To this end, the concept of the Treaty on the non-Proliferation of Nuclear weapons and its advantages have so far been limited to categories above 1000V. 100um Wafer-- A milestone towards 600V NPT-IGBT
BUP213 Features
· 1200V NPT technology
· positive temperature coefficient
· easy paralleling
BUP213 Applications
· drives
