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BTS282Z E3180A

BTS282Z E3180A

BTS282Z E3180A

Infineon Technologies

MOSFET N-CH 49V 80A TO-220-7

SOT-23

BTS282Z E3180A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Operating Temperature-40°C~175°C TJ
PackagingCut Tape (CT)
Published 2001
Series TEMPFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 300W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 2V @ 240μA
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 232nC @ 10V
Drain to Source Voltage (Vdss) 49V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
FET Feature Temperature Sensing Diode
In-Stock:4832 items

About BTS282Z E3180A

The BTS282Z E3180A from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 49V 80A TO-220-7.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BTS282Z E3180A, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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