BSZ123N08NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
BSZ123N08NS3GATMA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
OptiMOS™
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
S-PDSO-N5
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.1W Ta 66W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
66W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
1700pF @ 40V
Current - Continuous Drain (Id) @ 25°C
10A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
18ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
10A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
80V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:4844 items
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Quantity
Unit Price
Ext. Price
BSZ123N08NS3GATMA1 Product Details
BSZ123N08NS3GATMA1 Description
BSZ123N08NS3GATMA1 is an 80v OptiMOS? 3 power transistor. The Infineon BSZ123N08NS3GATMA1 is designed for power generation, power supply, and power consumption due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor BSZ123N08NS3GATMA1 is in the TSDSON-8 package with 66W power dissipation.
BSZ123N08NS3GATMA1 Features
Optimized technology for DC-DC converters
Excellent gate charge x R DS(ON) product (FOM)
Superior thermal resistance
Dual sided cooling
Low parasitic inductance
Low profile (<0,7mm)
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
BSZ123N08NS3GATMA1 Applications
Solar
Consumer
Telecom
Server
PC power
DC-DC
AC-DC
Adapter
SMPS
LED
Motor control
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