BSZ067N06LS3 G Description
BSZ067N06LS3 G is a 60V OptiMOS™ 3 Power-Transistor. An N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor BSZ067N06LS3 G in the TSDSON-8 package with 69W power dissipation.
BSZ067N06LS3 G Features
Ideal for high-frequency switching and sync. rec.
Optimized technology for DC/DC converters
Excellent gate charge x RDs(on) product (FOM)
Very low on-resistance RDs(on)
N-channel, logic level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC for target applications
Halogen-free according to IEC61249-2-21
BSZ067N06LS3 G Applications
Communications equipment
Wireless infrastructure
Industrial
Grid infrastructure
Enterprise systems
Datacenter & enterprise computing
