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BSM35GB120DN2HOSA1

  • BSM35GB120DN2HOSA1 - BSM35GB120DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
  • BSM35GB120DN2HOSA1 - BSM35GB120DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

BSM35GB120DN2HOSA1

BSM35GB120DN2HOSA1

Infineon Technologies

BSM35GB120DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM35GB120DN2HOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
Pbfree Code no
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count7
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Power - Max 280W
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 50A
Turn On Time120 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 35A
Turn Off Time-Nom (toff) 450 ns
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 2nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:2276 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$407.971160$407.97116
10$394.556248$3945.56248
25$391.813553$9795.338825
50$389.089924$19454.4962
100$381.087095$38108.7095
500$353.841314$176920.657

BSM35GB120DN2HOSA1 Product Details

BSM35GB120DN2HOSA1 Features

Half-bridge

Including fast free-wheeling diodes

Doubled diode area

Package with insulated metal base plate


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