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BSM30GP60BOSA1

BSM30GP60BOSA1

BSM30GP60BOSA1

Infineon Technologies

BSM30GP60BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM30GP60BOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case Module
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~125°C
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 24
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count24
JESD-30 Code R-XUFM-X24
Qualification StatusNot Qualified
Number of Elements 7
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 180W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Current - Collector Cutoff (Max) 300nA
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 50A
Turn On Time105 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Turn Off Time-Nom (toff) 315 ns
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 1.6nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:3407 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$92.68100$926.81

BSM30GP60BOSA1 Product Details

BSM30GP60BOSA1 Description

IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

BSM30GP60BOSA1 Applications

·Auxiliary inverters

·Motor drives

·Servo drives

BSM30GP60BOSA1 Features

·Low VcEsat

·Tjop=150°℃

·Trench IGBT 4

·VCEsatwith positive temperature coefficient

Mechanical Features

·AlzO3 substrate with low thermal resistance

·High power and thermal cycling capability*Integrated NTC temperature sensor

·Copper base plate


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