BSM100GP60BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
BSM100GP60BOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
24
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
24
JESD-30 Code
R-XUFM-X24
Qualification Status
Not Qualified
Number of Elements
7
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
420W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Three Phase Bridge Rectifier
Current - Collector Cutoff (Max)
500μA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
135A
Turn On Time
110 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 100A
Turn Off Time-Nom (toff)
330 ns
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
4.3nF @ 25V
RoHS Status
ROHS3 Compliant
In-Stock:4584 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$178.10000
$1781
BSM100GP60BOSA1 Product Details
BSM100GP60BOSA1 Description
BSM100GP60BOSA1 is a single IGBT with a Collector Emitter Breakdown Voltage of 600V from Infineon Technologies. BSM100GP60BOSA1 operates between -40°C~125°C TJ, and its Current - Collector (Ic) (Max) is 135A. The BSM100GP60BOSA1 has 3 pins and it is available in Module packaging way. BSM100GP60BOSA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.
BSM100GP60BOSA1 Features
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
Current - Collector (Ic) (Max): 135A
Current - Collector Cutoff (Max): 500μA
Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
Transistor Application: POWER CONTROL
BSM100GP60BOSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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