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BSM100GB120DN2KHOSA1

  • BSM100GB120DN2KHOSA1 - BSM100GB120DN2KHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
  • BSM100GB120DN2KHOSA1 - BSM100GB120DN2KHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

BSM100GB120DN2KHOSA1

BSM100GB120DN2KHOSA1

Infineon Technologies

BSM100GB120DN2KHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

BSM100GB120DN2KHOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature150°C TJ
Published 1999
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Half Bridge
Power - Max 700W
Input Standard
Current - Collector Cutoff (Max) 2mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 145A
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 100A
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 6.5nF @ 25V
RoHS StatusROHS3 Compliant
In-Stock:107 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$96.65000$966.5

BSM100GB120DN2KHOSA1 Product Details

BSM100GB120DN2KHOSA1 Description


Power Module for IGBT



BSM100GB120DN2KHOSA1 Features


  • Half-bridge

  • Including quick-moving diodes

  • insulated metal base plate for the package



BSM100GB120DN2KHOSA1 Applications


Drives of motors


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