Name: BSL211SP
Brand: Infineon Technologies
SKU: BSL211SP
Availability: InStock

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BSL211SP

Manufacturer part number:BSL211SP

Manufacturer:Infineon Technologies

Description:BSL211SP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSL211SP Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	OptiMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
HTS Code	8541.29.00.95
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	67m Ω @ 4.7A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	654pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.7A Ta
Gate Charge (Qg) (Max) @ Vgs	12.4nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Drain Current-Max (Abs) (ID)	4.7A
Drain-source On Resistance-Max	0.067Ohm
Pulsed Drain Current-Max (IDM)	18.8A
DS Breakdown Voltage-Min	20V
Avalanche Energy Rating (Eas)	26 mJ
RoHS Status	Non-RoHS Compliant

BSL211SP Product Details

BSL211SP Description

BSL211SP is a 20V P-channel enhancement mode Field-Effect Transistor (FET) in TSOP-6. It is a member of Infineon’s highly innovative OptiMOS? families.

BSL211SP transistor consistently meets the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.