BSC032N03SG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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BSC032N03SG Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
OptiMOS™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
50A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
8
JESD-30 Code
R-PDSO-F5
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.8W Ta 78W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.8W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 70μA
Input Capacitance (Ciss) (Max) @ Vds
5080pF @ 15V
Current - Continuous Drain (Id) @ 25°C
23A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs
39nC @ 5V
Rise Time
7ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
5.4 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
100A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
23A
Drain-source On Resistance-Max
0.0049Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
200A
Avalanche Energy Rating (Eas)
550 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:2512 items
BSC032N03SG Product Details
BSC032N03SG Description
BSC032N03SG is a 30v OptiMOS? 2 Power-Transistor. The Infineon BSC032N03SG can be applied for SMPS, and Notebook DC/DC converters due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET BSC032N03SG is in the TDSON-8 package with 2.8W power dissipation.
BSC032N03SG Features
Qualified according to JEDEC' for target applications
Logic level/N-channel
Excellent gate charge x RDs/(on) product (FOM)
Very low on-resistance RDS(on)
Superior thermal resistance
Avalanche rated; dv/dt rated
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
BSC032N03SG Applications
SMPS
Notebook DC/DC converters
Computers
Sensitive electronics
Battery-operated devices
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