BSC010NE2LSIATMA1 Description
The BSC010NE2LSIATMA1 is an N-channel Power MOSFET that features reduced power losses and increased efficiency for all load conditions. With the new OptiMOS? 25V product family, Infineon sets new standards in power density and energy efficiency, and system in package. Ultra low gate and output charge, together with the lowest ON-state resistance in small footprint packages, make OptiMOS? 25V the best choice for the demanding requirements of voltage regulator solution applications. BSC010NE2LSI is an N-channel power MOSFET with reduced power losses and higher efficiency under all load conditions. With its low gate and output charge and lowest ON-state resistance, OptiMOSTM 25V is the ideal voltage regulator solution material for applications requiring a small footprint.
BSC010NE2LSIATMA1 Features
Verylowon-resistance(on)@VGS=4.5V
100%avalanchetested
N-channel
Pb-freeleadplating;RoHS-compliant
OptimizedforhighperformanceBuckconverter
MonolithicintegratedSchottkylikediode
QualifiedaccordingtoJEDEC1)for target applications
Halogen-freeaccordingtoIEC61249-2-21
BSC010NE2LSIATMA1 Applications
LED
Onboard charger
Mainboard
Notebook
DC-DC
VRD/VRM
Motor control
