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BGB717L7ESDE6327

BGB717L7ESDE6327

BGB717L7ESDE6327

Infineon Technologies

12 dB NARROW BAND LOW POWER Digi-Reel® 108MHz P1dB:-5.5 dBm 1 dB 3mA

SOT-23

BGB717L7ESDE6327 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Number of Pins 6
PackagingDigi-Reel®
Max Operating Temperature150°C
Min Operating Temperature -55°C
Construction COMPONENT
Frequency 108MHz
Operating Supply Voltage4V
Test Frequency100MHz
Power Dissipation-Max 100mW
Operating Supply Current 3mA
Gain 12 dB
RF/Microwave Device Type NARROW BAND LOW POWER
Characteristic Impedance 50Ohm
Noise Figure1 dB
P1dB -5.5 dBm
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:16246 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.41000$0.41
500$0.4059$202.95
1000$0.4018$401.8
1500$0.3977$596.55
2000$0.3936$787.2
2500$0.3895$973.75

BGB717L7ESDE6327 Product Details

BGB717L7ESDE6327 Overview


A cost-effective RF amplifier with NARROW BAND LOW POWER RF/Microwave device type.High reliability is achieved using advanced RF Amp' packaging Digi-Reel®.For it to perform as expected, the supply current must be in the range of 3mA.6 pins are on the high power RF Amplifier.At a temperature around 150°C degrees Celsius, RF power Amplifier shouldbe running.

BGB717L7ESDE6327 Features


NARROW BAND LOW POWER RF/Microwave Amplifier
6 pins


BGB717L7ESDE6327 Applications


There are a lot of Infineon Technologies
BGB717L7ESDE6327 RF Amplifiers applications.


  • Avionics
  • GPS
  • GLONASS
  • BeiDou
  • Galileo
  • Wireless communications
  • ISM applications
  • Wireless infrastructure
  • Automated test equipment
  • RF/IF gain control

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