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BGA616E6327

BGA616E6327

BGA616E6327

Infineon Technologies

17.5 dB WIDE BAND LOW POWER Tape & Reel (TR) P1dB:18 dBm 2.5 dB 80mA

SOT-23

BGA616E6327 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case SOT-343-4
Number of Pins 4
PackagingTape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Terminal Finish Matte Tin (Sn)
Max Operating Temperature150°C
Min Operating Temperature -65°C
Construction COMPONENT
Operating Supply Voltage6V
Number of Channels 1
Test Frequency1GHz
Power Dissipation-Max 360mW
Operating Supply Current 80mA
Nominal Supply Current60mA
Gain 17.5 dB
RF/Microwave Device Type WIDE BAND LOW POWER
Operating Frequency-Max 2700MHz
Characteristic Impedance 50Ohm
Noise Figure2.5 dB
P1dB 18 dBm
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2212 items

BGA616E6327 Product Details

BGA616E6327 Overview


An RF Amplifier with a cost-effective RF/Microwave device type of WIDE BAND LOW POWER.Using advanced packaging techniques Tape & Reel (TR), high reliability is ensured.The RF power Amplifier has been packed in SOT-343-4 for convenient overseas shipping.For this high power RF Amplifier, there is a maximum operating frequency of 2700MHz.If the supply current is operated in the range of 80mA or higher, it will provide its performance.On this high power RF Amplifier, there are 4 pins.At150°C, RF power Amplifier shouldrun.

BGA616E6327 Features


WIDE BAND LOW POWER RF/Microwave Amplifier
4 pins


BGA616E6327 Applications


There are a lot of Infineon Technologies
BGA616E6327 RF Amplifiers applications.


  • GPS
  • GLONASS
  • BeiDou
  • Galileo
  • Wireless communications
  • ISM applications
  • Wireless infrastructure
  • Automated test equipment
  • RF/IF gain control
  • Microwave Radios

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