BFP650 Description
The BFP650 is a SiGe:C RF bipolar transistor from Infineon's established sixth-generation transistor family. The device's strong linearity qualities at low currents and 42 GHz transition frequency make it appropriate for the energy I i"n 6 designs at frequencies up to 5 GHz. It remains cost-effective without sacrificing usability.
BFP650 Features
? NFmin = 1 dB minimum noise figure at 2.4 GHz, 3 V, 30 mA
? Gma = 17.5 dB high gain at 2.4 GHz, 3 V, 70 mA
? 30 dBm OIP3 at 2.4 GHz, 3 V, 70 mA
BFP650 Applications
? SDARS receivers have low noise, high linearity amplifiers.
? ISM band amplifiers with low noise and excellent linearity
? Amplifiers with low noise and high linearity for multimedia applications such as CATV
