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BCR35PNE6327BTSA1

BCR35PNE6327BTSA1

BCR35PNE6327BTSA1

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

SOT-23

BCR35PNE6327BTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-6
PackagingTape & Reel (TR)
Published 2011
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation250mW
Base Part Number BCR35PN
Power - Max 250mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 150MHz
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 47kOhms
RoHS StatusRoHS Compliant
In-Stock:4971 items

About BCR35PNE6327BTSA1

The BCR35PNE6327BTSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS NPN/PNP PREBIAS SOT363.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BCR35PNE6327BTSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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