Name: AUIRLS4030
Brand: Infineon Technologies
SKU: AUIRLS4030
Availability: InStock

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AUIRLS4030

Manufacturer part number:AUIRLS4030

Manufacturer:Infineon Technologies

Description:AUIRLS4030 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRLS4030 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	Automotive, AEC-Q101, HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	370W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	370W
Case Connection	DRAIN
Turn On Delay Time	74 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.3m Ω @ 110A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11360pF @ 50V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 4.5V
Rise Time	330ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	170 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	180A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	100V
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

AUIRLS4030 Product Details

AUIRLS4030 Description

The AUIRLS4030 is an ultra-low ON-resistance per silicon area single N-channel HEXFET? Power MOSFET that makes use of the most recent production methods. A 175??C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to make this design a very dependable and effective device.