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AUIRLR3110Z

AUIRLR3110Z

AUIRLR3110Z

Infineon Technologies

AUIRLR3110Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

AUIRLR3110Z Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 26 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2011
Series HEXFET®
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional FeatureULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number AUIRLR3110Z
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 140W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation140W
Case Connection DRAIN
Turn On Delay Time24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
Rise Time110ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 1V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 250A
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:1363 items

AUIRLR3110Z Product Details

AUIRLR3110Z Description


produced by Infineon Technologies is AUIRLR3110Z. It falls under the category of RF Bipolar Transistors. Numerous industries, including automotive infotainment & cluster, industrial lighting, personal electronics, and gaming, use it. Power Field-Effect Transistor, 42A I(D), 100V, 0.014 ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA are the major specifications for this component. It is also environmentally friendly and RoHS compliant (lead free).



AUIRLR3110Z Features


  • Logic level gate drive

  • Advanced process technology

  • Repetitive avalanche allowed up to Tjmax



AUIRLR3110Z Applications


  • Industrial

  • Automotive

  • Power management

  • Personal electronics


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