AUIRFZ44N Description
This cellular design of AUIRFZ44N HEXFET Power MOSFETs, specifically created for automotive applications, makes use of cutting-edge processing techniques to achieve low on-resistance per silicon area. This feature gives the designer an incredibly efficient and dependable device for use in automotive and a wide range of other applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are well known for.
AUIRFZ44N Features
Isolated Package
Low On-Resistance
Fully Avalanche Rated
Automotive Qualified
Lead-Free, RoHS Compliant
Advanced Planar Technology
175°C Operating Temperature
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Distance = 4.8mm
AUIRFZ44N Applications
Industrial
Personal electronics
Communications equipment
