Name: AUIRFS8408
Brand: Infineon Technologies
SKU: AUIRFS8408
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	IRFS8408
Number of Channels	1
Power Dissipation-Max	294W Tc
Element Configuration	Single
Power Dissipation	294W
Turn On Delay Time	29 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	10820pF @ 25V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	324nC @ 10V
Rise Time	202ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	119 ns
Turn-Off Delay Time	108 ns
Continuous Drain Current (ID)	195A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Nominal Vgs	3 V
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

AUIRFS8408 Product Details

AUIRFS8408 Description

This HEXFET? Power MOSFET, specifically created for automotive applications, makes use of cutting-edge manufacturing processes to produce incredibly low on resistance per silicon area. A 175°C junction working temperature, quick switching, and enhanced repeating avalanche ratio are other benefits of this design. These characteristics work together to make this product a very effective and dependable tool for use in a range of various industries, including automotive.