AUIRFS3107 Description
Specifically designed for Automotive applications, AUIRFS3107 HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications
AUIRFS3107 Features
Fast Switching
Automotive Qualified *
Ultra Low On-Resistance
Lead-Free, RoHS Compliant
Advanced Process Technology
175°C Operating Temperature
Enhanced dV/dT and dI/dT capability
Repetitive Avalanche Allowed up to Tjmax
AUIRFS3107 Applications
Industrial
Enterprise systems
Personal electronics
