Name: AUIRFR5410
Brand: Infineon Technologies
SKU: AUIRFR5410
Availability: InStock

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AUIRFR5410

Manufacturer part number:AUIRFR5410

Manufacturer:Infineon Technologies

Description:AUIRFR5410 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRFR5410 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	66W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	66W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	205m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	760pF @ 25V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Rise Time	58ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	13A
Threshold Voltage	-2V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.205Ohm
Drain to Source Breakdown Voltage	-100V
Pulsed Drain Current-Max (IDM)	52A
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

AUIRFR5410 Product Details

AUIRFR5410 Description

AUIRFR5410 is a type of HEXFET? power MOSFET developed by Infineon Technologies for low on-resistance per silicon area. It is designed utilizing the latest processing techniques. High flexibility and reliability can be ensured based on its fast switching speed, ruggedized device design, and a 175??C junction operating temperature. All these features enable this device to be well suited for automotive and other applications.