Name: AUIRFR4620
Brand: Infineon Technologies
SKU: AUIRFR4620
Availability: InStock

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AUIRFR4620

Manufacturer part number:AUIRFR4620

Manufacturer:Infineon Technologies

Description:AUIRFR4620 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRFR4620 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	144W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	144W
Case Connection	DRAIN
Turn On Delay Time	13.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	78m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 50V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	22.4ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14.8 ns
Turn-Off Delay Time	25.4 ns
Continuous Drain Current (ID)	24A
Threshold Voltage	3V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.078Ohm
Drain to Source Breakdown Voltage	200V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

AUIRFR4620 Product Details

AUIRFR4620 Description

The AUIRFR4620 HEXFET? Power MOSFET, which is specifically made for automotive applications, makes use of cutting-edge processing processes to achieve incredibly low on-resistance per silicon area. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design.

These characteristics work together to provide a highly effective and dependable gadget that may be used in a multitude of applications, including automotive ones.