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AUIRF3710Z

AUIRF3710Z

AUIRF3710Z

Infineon Technologies

AUIRF3710Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

AUIRF3710Z Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2010
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 160W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation160W
Turn On Delay Time17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 59A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time77ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 59A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 200 mJ
Nominal Vgs 2 V
Height 9.017mm
Length 10.6426mm
Width 4.82mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
In-Stock:1110 items

AUIRF3710Z Product Details

AUIRF3710Z Description


AUIRF3710Z is a type of HEXFET? power MOSFET developed by Infineon Technologies for low on-resistance per silicon area utilizing the latest processing techniques. Fast switching speed and improved repetitive avalanche rating can also be delivered. All these features enable this device to be well suited for automotive and other applications.



AUIRF3710Z Features


  • Low on-resistance per silicon area

  • Latest processing techniques

  • Fast switching speed

  • Improved repetitive avalanche rating

  • Available in the D2Pak package



AUIRF3710Z Applications


  • Automotive applications


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