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AUIRF2807

AUIRF2807

AUIRF2807

Infineon Technologies

AUIRF2807 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

AUIRF2807 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2011
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 230W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation230W
Case Connection DRAIN
Turn On Delay Time13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3820pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time64ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 280A
Nominal Vgs 2 V
Height 16.51mm
Length 10.66mm
Width 4.82mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
In-Stock:3986 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.119002$1.119002
10$1.055662$10.55662
100$0.995907$99.5907
500$0.939535$469.7675
1000$0.886354$886.354

AUIRF2807 Product Details

AUIRF2807 Description


Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are

well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.



AUIRF2807 Features


  • Fast Switching

  • Low On-Resistance

  • Fully Avalanche Rated

  • Dynamic dv/dt Rating

  • Automotive Qualified *

  • Lead-Free, RoHS Compliant

  • Advanced Planar Technology

  • 175°C Operating Temperature

  • Repetitive Avalanche Allowed up to Tjmax




AUIRF2807 Applications


  • Switching


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