Name: AUIRF1324S
Brand: Infineon Technologies
SKU: AUIRF1324S
Availability: InStock

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AUIRF1324S

Manufacturer part number:AUIRF1324S

Manufacturer:Infineon Technologies

Description:AUIRF1324S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRF1324S Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	39 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.65m Ω @ 195A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7590pF @ 24V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	190ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	120 ns
Turn-Off Delay Time	83 ns
Continuous Drain Current (ID)	195A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	24V
Avalanche Energy Rating (Eas)	270 mJ
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

AUIRF1324S Product Details

AUIRF1324S Description

AUIRF1324S, developed by Infineon Technologies, emerges as a member of the P-channel HEXFET? power MOSFET series specifically designed for automotive applications. Low on-resistance per silicon area can be realized based on advanced processing techniques. Its fast switching speed, ruggedized device design, and logic-level gate drive ensure high flexibility and reliability. As a result, AUIRF1324S is extremely efficient for electronic designers to use in a wide range of applications.