SPB17N80C3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 670 mJ.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 72 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 250mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 800V.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.
SPB17N80C3 Features
the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 17A
the turn-off delay time is 72 ns
single MOSFETs transistor is 250mOhm
a 800V drain to source voltage (Vdss)
SPB17N80C3 Applications
There are a lot of Infineon
SPB17N80C3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
