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GD5F1GQ4UFYIGR

GD5F1GQ4UFYIGR

GD5F1GQ4UFYIGR

GigaDevice Semiconductor (HK) Limited

Memory IC

SOT-23

GD5F1GQ4UFYIGR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Operating Temperature-40°C~85°C TA
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FLASH - NAND
Voltage - Supply 2.7V~3.6V
Memory Size1Gb 128M x 8
Memory TypeNon-Volatile
Clock Frequency 120MHz
Memory Format FLASH
Memory InterfaceSPI - Quad I/O
Write Cycle Time - Word, Page 700μs
RoHS StatusROHS3 Compliant
In-Stock:1891 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$12.886440$12.88644
10$12.157019$121.57019
100$11.468886$1146.8886
500$10.819704$5409.852
1000$10.207267$10207.267

GD5F1GQ4UFYIGR Product Details

GD5F1GQ4UFYIGR Overview


In this case, the memory type of the device can be classified as Non-Volatile. In addition, memory ics is available in a Tape & Reel (TR) case as well. There is a 8-WDFN Exposed Pad case embedded in it. There is an 1Gb 128M x 8 memory capacity on the chip. This device utilizes a FLASH format memory which is of mainstream design. -40°C~85°C TA is an extended operating temperature range, making this device ideal for demanding applications. There is a voltage range of 2.7V~3.6V for the supply voltage. Its recommended mounting type is Surface Mount. With a clock frequency of 120MHz, the memory rotates on its own.

GD5F1GQ4UFYIGR Features


Package / Case: 8-WDFN Exposed Pad

GD5F1GQ4UFYIGR Applications


There are a lot of GigaDevice Semiconductor (HK) Limited GD5F1GQ4UFYIGR Memory applications.

  • Camcorders
  • eDRAM
  • data buffer
  • hard disk drive (HDD)
  • workstations,
  • multimedia computers
  • personal computers
  • telecommunications
  • printers
  • supercomputers

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