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GD5F1GQ4UEYIGR

GD5F1GQ4UEYIGR

GD5F1GQ4UEYIGR

GigaDevice Semiconductor (HK) Limited

Memory IC

SOT-23

GD5F1GQ4UEYIGR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Operating Temperature-40°C~85°C TA
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FLASH - NAND
Voltage - Supply 2.7V~3.6V
Memory Size1Gb 128M x 8
Memory TypeNon-Volatile
Clock Frequency 120MHz
Memory Format FLASH
Memory InterfaceSPI - Quad I/O
Write Cycle Time - Word, Page 700μs
RoHS StatusROHS3 Compliant
In-Stock:3631 items

Pricing & Ordering

QuantityUnit PriceExt. Price

GD5F1GQ4UEYIGR Product Details

GD5F1GQ4UEYIGR Overview


In terms of its memory type, it can be classified as Non-Volatile. There is a Tape & Reel (TR) case available. The case is embedded in 8-WDFN Exposed Pad. A memory chip with a capacity of 1Gb 128M x 8 is used on this device. Memory data is stored in FLASH-format, which is common in mainstream devices. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 2.7V~3.6V. Its recommended mounting type is Surface Mount. During the rotation of the clock, the ic memory chip is set as 120MHz.

GD5F1GQ4UEYIGR Features


Package / Case: 8-WDFN Exposed Pad

GD5F1GQ4UEYIGR Applications


There are a lot of GigaDevice Semiconductor (HK) Limited GD5F1GQ4UEYIGR Memory applications.

  • servers
  • multimedia computers
  • Camcorders
  • eSRAM
  • data buffer
  • telecommunications
  • graphics card
  • workstations,
  • cell phones
  • DVD disk buffer

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