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GD25Q80CTIGR

GD25Q80CTIGR

GD25Q80CTIGR

GigaDevice Semiconductor (HK) Limited

Memory IC 4.9mm mm

SOT-23

GD25Q80CTIGR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface MountYES
Operating Temperature-40°C~85°C TA
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
Technology FLASH - NOR
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch1.27mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size8Mb 1M x 8
Memory TypeNon-Volatile
Operating ModeSYNCHRONOUS
Clock Frequency 120MHz
Memory Format FLASH
Memory InterfaceSPI - Quad I/O
Organization 8MX1
Memory Width 1
Write Cycle Time - Word, Page 50μs, 2.4ms
Memory Density 8388608 bit
Parallel/Serial SERIAL
Programming Voltage3.3V
Height Seated (Max) 1.75mm
Length 4.9mm
Width 3.9mm
RoHS StatusROHS3 Compliant
In-Stock:11551 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.333603$0.333603
10$0.314720$3.1472
100$0.296906$29.6906
500$0.280100$140.05
1000$0.264245$264.245

GD25Q80CTIGR Product Details

GD25Q80CTIGR Overview


As far as memory types are concerned, Non-Volatile is considered to be its memory type. The case comes in Tape & Reel (TR) size. There is a 8-SOIC (0.154, 3.90mm Width) case embedded in it. It is estimated that the memory size on the chip is 8Mb 1M x 8. FLASH-format memory is used in this device, which is a mainstream design. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. There is a voltage range of 2.7V~3.6V for the supply voltage. There is a recommendation that Surface Mount mounting type should be used for this product. The chip is terminated with 8 terminations. The part supports at least 1 functions to ensure a comprehensive working process. A voltage of 3.3V is required for the operation of this memory device. In this memory, the clock frequency rotation is within an 120MHz range. Nonvolatile memory arrays require 3.3V programming voltage to change their state.

GD25Q80CTIGR Features


Package / Case: 8-SOIC (0.154, 3.90mm Width)

GD25Q80CTIGR Applications


There are a lot of GigaDevice Semiconductor (HK) Limited GD25Q80CTIGR Memory applications.

  • graphics card
  • data buffer
  • embedded logic
  • eDRAM
  • supercomputers
  • Cache memory
  • eSRAM
  • servers
  • workstations,
  • telecommunications

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