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GD25LQ64CWIGR

GD25LQ64CWIGR

GD25LQ64CWIGR

GigaDevice Semiconductor (HK) Limited

Memory IC 6mm mm

SOT-23

GD25LQ64CWIGR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Surface MountYES
Operating Temperature-40°C~85°C TA
PackagingTape & Reel (TR)
Published 2016
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
ECCN Code 3A991.B.1.A
HTS Code8542.32.00.51
Technology FLASH - NOR
Voltage - Supply 1.65V~2V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch1.27mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N8
Supply Voltage-Max (Vsup) 2V
Supply Voltage-Min (Vsup) 1.65V
Memory Size64Mb 8M x 8
Memory TypeNon-Volatile
Operating ModeSYNCHRONOUS
Clock Frequency 120MHz
Memory Format FLASH
Memory InterfaceSPI - Quad I/O
Organization 64MX1
Memory Width 1
Write Cycle Time - Word, Page 2.4ms
Memory Density 67108864 bit
Parallel/Serial SERIAL
Programming Voltage1.8V
Length 6mm
Height Seated (Max) 0.8mm
Width 5mm
RoHS StatusROHS3 Compliant
In-Stock:5562 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.833926$0.833926
10$0.786722$7.86722
100$0.742192$74.2192
500$0.700180$350.09
1000$0.660547$660.547

GD25LQ64CWIGR Product Details

GD25LQ64CWIGR Overview


There is a Non-Volatile memory type associated with this device. Tape & Reel (TR)-cases are available. There is a 8-WDFN Exposed Pad case embedded in it. 64Mb 8M x 8 is the chip's memory size. FLASH-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 1.65V~2V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 8 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 1.8V and should be used as such. In this memory, the clock frequency rotation is within an 120MHz range. It is necessary to apply 1.8V programming voltage to certain nonvolatile memory arrays in order to change their state.

GD25LQ64CWIGR Features


Package / Case: 8-WDFN Exposed Pad


GD25LQ64CWIGR Applications


There are a lot of GigaDevice Semiconductor (HK) Limited
GD25LQ64CWIGR Memory applications.


  • mainframes
  • multimedia computers
  • networking
  • personal computers
  • servers
  • supercomputers
  • telecommunications
  • workstations,
  • DVD disk buffer
  • data buffer

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