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MBRTA80035R

MBRTA80035R

MBRTA80035R

GeneSiC Semiconductor

MBRTA80035R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available on our website

SOT-23

MBRTA80035R Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Three Tower
Diode Element Material SILICON
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code8541.10.00.80
Terminal Position UPPER
Terminal FormUNSPECIFIED
JESD-30 Code R-PUFM-X3
Operating Temperature (Max) 150°C
Number of Elements 2
Element ConfigurationCommon Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 35V
Voltage - Forward (Vf) (Max) @ If 720mV @ 400A
Case Connection ISOLATED
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 35V
Average Rectified Current400A
Number of Phases 1
Non-rep Pk Forward Current-Max 6000A
Diode Configuration 1 Pair Common Anode
Reverse Current-Max 1000μA
RoHS StatusRoHS Compliant
In-Stock:2322 items

MBRTA80035R Product Details

MBRTA80035R Overview


A forward voltage monitoring system should be used and the forward voltage should never exceed 1000μA.

MBRTA80035R Features


a forward voltage of 1000μA
a forward voltage of 1000μA

MBRTA80035R Applications


There are a lot of GeneSiC Semiconductor MBRTA80035R applications of rectifier diode array.

  • Rectifiers in switch mode power supplies (SMPS)
  • Crowbar applications
  • General Rectification
  • Rectifier for drives applications
  • Battery chargers
  • Rectifiers for UBS
  • Free wheeling diode in low voltage converters

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